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MAX6720 - Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Dual/Triple Ultra-Low-Voltage SOT23 μP Supervisory Circuits Dual/Triple Ultra-Low-Voltage SOT23 P Supervisory Circuits Replaced by TPL9201 : Microcontroller Power Supply and Low-Side Driver 20-PDIP -40 to 125 Dual/Triple Ultra-Low-Voltage SOT23 レP Supervisory Circuits 三路、超低电压、SOT23封装、微处理器监控电 8-Bit Shift Register 16-PDIP -40 to 125 三路、超低电压、SOT23封装、微处理器监控电 Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit

MAX6720_191756.PDF Datasheet

 
Part No. MAX6720 MAX6720UTD-T MAX6729 MAX6717 MAX6722UTD-T MAX6723 MAX6724 MAX6719 MAX6718 MAX6721 MAX6722 MAX6725 MAX6718UKDT MAX6719UTDT MAX6717UKDT MAX6715 MAX6715UTDT MAX6716 MAX6716UTDT MAX6720UTDT MAX6726 MAX6727 MAX6728 MAX6715UTYDD3-T MAX6716UTYDD3-T MAX6719UTYDD3-T MAX6720UTYDD3-T MAX6721UTYDD3-T MAX6722UTYDD3-T MAX6723UTYDD3-T MAX6724UTYDD3-T
Description Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Dual/Triple Ultra-Low-Voltage SOT23 μP Supervisory Circuits
Dual/Triple Ultra-Low-Voltage SOT23 P Supervisory Circuits
Replaced by TPL9201 : Microcontroller Power Supply and Low-Side Driver 20-PDIP -40 to 125
Dual/Triple Ultra-Low-Voltage SOT23 レP Supervisory Circuits 三路、超低电压、SOT23封装、微处理器监控电
8-Bit Shift Register 16-PDIP -40 to 125 三路、超低电压、SOT23封装、微处理器监控电
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit

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 Full text search : Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Dual/Triple Ultra-Low-Voltage SOT23 μP Supervisory Circuits Dual/Triple Ultra-Low-Voltage SOT23 P Supervisory Circuits Replaced by TPL9201 : Microcontroller Power Supply and Low-Side Driver 20-PDIP -40 to 125 Dual/Triple Ultra-Low-Voltage SOT23 レP Supervisory Circuits 三路、超低电压、SOT23封装、微处理器监控电 8-Bit Shift Register 16-PDIP -40 to 125 三路、超低电压、SOT23封装、微处理器监控电 Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit


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Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output
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FETs - Nch 250VFETs - Nch 250VSmall-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: standard; Internal connection: single; V R (V): (max 40)
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Junction FETs (Single); Surface Mount Type: Y; Package: TESM3; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 0.08) (max 0.48); I_DSS, max (mA): (min 1.4); |Yfs|, min (mS): (max -20)
Junction FETs (Single); Surface Mount Type: N; Package: TO-92; XJE016 JEITA: SC-43; Number of Pins: 3; Comments: Low-noise; I_DSS, min (mA): (min 0.3) (max 6.5); I_DSS, max (mA): (min 1.2); |Yfs|, min (mS): (max -50)
Junction FETs (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: General-purpose; Part Number: 2SJ106; I_DSS, min (mA): (min 0.3) (max 6.5); I_DSS, max (mA): (min 1.2); |Yfs|, min (mS): (max -50)
Junction FETs (Single); Surface Mount Type: N; Package: TO-92; XJE016 JEITA: SC-43; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 1.2) (max 14); I_DSS, max (mA): (min 4); |Yfs|, min (mS): (max -50)
Junction FETs (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: General-purpose; Part Number: 2SK208; I_DSS, min (mA): (min -1.2) (max -14); I_DSS, max (mA): (min 1); |Yfs|, min (mS): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; V th (V): (min 0.5) (max 1.1); R DS On (Ω): 0.041 (max 0.054) 0.034 (max 0.040); Drain-Source Voltage (V): (max 20); Drain Current (mA): (max 4000)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; V th (V): (min 0.4) (max 1.1); R DS On (Ω): 0.190 (max 0.230) 0.150 (max 0.170); Drain-Source Voltage (V): (max 20); Drain Current (mA): (max 1400)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; V th (V): (min 1.3) (max 2.5); R DS On (Ω): 0.058 (max 0.077) 0.038 (max 0.050); Drain-Source Voltage (V): (max 30); Drain Current (mA): (max 3000)
FETs - Nch 250VSmall-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: ESV; Number of Pins: 5; Internal connection: Source-Common; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max /-20); I_D Q1, max (mA): (max 100)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max ±20); I_D Q1, max (mA): (max 400)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max /-20); I_D Q1, max (mA): (max 100)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max -30); V_GSS(Q1), max (V): (max /-20); I_D Q1, max (mA): (max -200)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max -30); V_GSS(Q1), max (V): (max /-20); I_D Q1, max (mA): (max -100)
FETs - Nch 250VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Application Scope: mobile; R DS On (Ω): (max 0.04) (max 0.03); I_S (A): (max 5)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 60); V_GSS(Q1), max (V): (max /-20); I_D Q1, max (mA): (max 200)
FETs - Nch 700VFETs - Nch 700VMOSFETs - Nch VDSS=30V; ; Package: STP; Number Of Pins: 4; Application Scope: mobile; V_SSS (V): (max 20); P D (W): (max 6)
High Efficiency Diodes (HEDs); Surface Mount Type: Y; Package: L-FLAT; Number Of Pins: 2; Internal Connection: Single; T RR (ns): (max 35); Repetitive Peak Reverse Voltage V_RRM Max (V): (max 3); I O (A): (max 200)
High Efficiency Diodes (HEDs); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Application Scope: Switching mode power supply; Internal Connection: Center tap; T RR (ns): (max 35); I O (A): (max 400)
High Efficiency Diodes (HEDs); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Application Scope: Switching mode power supply; Internal Connection: Center tap; T RR (ns): (max 35); I O (A): (max 300)
High-Frequency Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI(Twin); Number Of Pins: 3; Application Scope: VHF, UHF MIX; V F (V): 0.25; C T (pF): 0.6; V R (V): (max 4); Average Forward Current I_F Max (mA): (max 30)
Pch Power MOSFET; Surface Mount Type: Y; Package: SOP-8; Application Scope: mobile; R DS On (Ω): (max 0.08) (max 0.05) (max 0.03); I_S (A): (max -5)
High Efficiency Diodes (HEDs); Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; Application Scope: Switching mode power supply; Internal Connection: Center tap; T RR (ns): (max 35); I O (A): (max 600)
High Efficiency Diodes (HEDs); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Application Scope: Switching mode power supply; Internal Connection: Center tap; T RR (ns): (max 35); I O (A): (max 200)
High Efficiency Diodes (HEDs); Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; Application Scope: Switching mode power supply; Internal Connection: Center tap; T RR (ns): (max 35); I O (A): (max 300)
High Efficiency Diodes (HEDs); Surface Mount Type: N; Package: TO-3P(N)IS; Number Of Pins: 3; Application Scope: Switching mode power supply; Internal Connection: Center tap; T RR (ns): (max 35); I O (A): (max 300)
Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Low-Frequency Power Transistor; Comments: Darlington
Phase Lock Loop; Dual or Single: Dual; Features: Integer - N (including Mixer); Power Supply V: 2.0 ~ 5.5; ImA: 16; Input FMHz: 200 ~ 400; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 93 ~ 107; Package: SSOP24; Production Status: MP
Phase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 5.5; ImA: 4.8; Input FMHz: 1610.5 ~ 1699.5; Operating Freq-MHz: 19.2 Typ; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
Phase Lock Loop; Dual or Single: Dual; Features: Integer - N; Power Supply V: 2.7 ~ 5.5; ImA: 16.5; Input FMHz: 520 ~ 1100; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP16; Production Status: MP
Phase Lock Loop; Dual or Single: Dual; Features: Integer - N (including Mixer); Power Supply V: 2.0 ~ 5.5; ImA: 16; Input FMHz: 200 ~ 520; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 93 ~ 107; Package: SSOP24; Production Status: MP
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Transistor for AC-DC converter; Application Scope: switching regulator
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1359
High Efficiency Diodes (HEDs); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Application Scope: Switching mode power supply; Internal Connection: Center tap; T RR (ns): (max 35); I O (A): (max 600)
Junction FETs (Single); Surface Mount Type: N; Package: TO-92; XJE016 JEITA: SC-43; Number of Pins: 3; Comments: Low-noise; Part Number: 2SJ74; I_DSS, min (mA): (min 2.6) (max 20); |Yfs|, min (mS): (max -40)
Variable Capacitance Diodes; Surface Mount Type: Y; Package: FM8; Number of Pins: 8; Application Scope: AM car radio
FETs - Nch 250VFETs - Nch 250VFETs - Nch 700VFETs - Nch 700VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: SOP-8; Application Scope: mobile; R DS On (Ω): (max 0.022) (max 0.014); I_S (A): (max 11)
FETs - Nch 500VFETs - Nch 700VMOSFETs - Nch VDSS=30V; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (Ω): (max 0.03); I_S (A): (max 40)
FETs - Nch 60VFETs - Nch 150VDiscrete IGBTs; Surface Mount Type: Y/N; Package: TO-220SM/FL; Number Of Pins: 3; No Of Circuits: 2; Comments: Low saturation voltage type; V_CES (V): (max 600)
Variable Capacitance Diodes; Surface Mount Type: Y; Package: ESC; Number of Pins: 2; Application Scope: BS tuner
X and Ku-Band Power GaAs IMFETS; Frequency Band (GHz): 13.75-14.5; P1dB (dBm): 42; G1dB (dB): 6; Ids (A) Typ.: 5.5; Package Type: 1.8; Rth (°C/W) Typ.: 7-AA03A
C-Band Power GaAs IMFETs; Frequency Band (GHz): 7.7-8.5; P1dB (dBm): 38.5; G1dB (dB): 8.5; Ids (A) Typ.: 1.6; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 3.8; Package Type: 2-11D1B
C-Band Power GaAs IMFETs; Frequency Band (GHz): 7.7-8.5; P1dB (dBm): 36.5; G1dB (dB): 8.5; Ids (A) Typ.: 1.1; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 4.5; Package Type: 2-11D1B
Pch Power MOSFET; Surface Mount Type: N; Package: TO-220NIS; R DS On (Ω): (max 0.12) (max 0.09); I_S (A): (max -18)
FETs Nch 30VSmall-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 20); V_GSS(Q1), max (V): (max /-12); I_D Q1, max (mA): (max 800)
FETs - Nch 250VSmall-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 20); V_GSS(Q1), max (V): (max /-12); I_D Q1, max (mA): (max 500)
FETs - Nch 150V<VDSS=250V; ; Package: TO-3P(L); R DS On (&#206;&#169;): (max 0.625); P D (W): (max 12)
FETs - Nch 150V<VDSS=250V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (&#206;&#169;): (max 0.45); P D (W): (max 1.9) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs - Nch 250V<VDSS=500V; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (&#206;&#169;): (max 0.85); P D (W): (max 8) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs - Nch 250V<VDSS=500V; ; Package: TO-3P(N); R DS On (&#206;&#169;): (max 0.27); P D (W): (max 20) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs - Nch 250V<VDSS=500V; ; Package: TO-3P(N)IS; R DS On (&#206;&#169;): (max 0.4); P D (W): (max 14) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
IF Wave Detection ICs; Application: Front End Mixer; Operating Voltage: 1.1-5.5V; Package: SSOP16 (1.00); Comments: Front End 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
Pch Power MOSFET; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (&#206;&#169;): (max 0.19) (max 0.12); I_S (A): (max -14) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
Single-/Dual-/Triple-Voltage &#181.P Supervisory Circuits with Independent Watchdog Output 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
Switching Diodes; Surface Mount Type: Y; Package: SM6; XJE016 JEITA: SC-74; Number of Pins: 6; Features: high-speed switching; Internal connection: 4 in 1; Reverse Voltage, max (V): (max 80) 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
FETs - Nch 150V<VDSS=250V; Surface Mount Type: N; Package: TO-220NIS; R DS On (&#206;&#169;): (max 0.5); P D (W): (max 7.5) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs - Nch 700V<VDSS; ; Package: TO-220SIS; R DS On (&#206;&#169;): (max 4.3); P D (W): (max 3) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs - Nch 500V<VDSS=700V; Surface Mount Type: N/Y; Package: NEW PW-MOLD2; Number Of Pins: 3; R DS On (&#206;&#169;): (max 5.0); P D (W): (max 2) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
Pch Power MOSFET; Surface Mount Type: N; Package: PW-MOLD; R DS On (&#206;&#169;): (max 5); I_S (A): (max -1) 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
FETs - Nch 250V<VDSS=500V; Surface Mount Type: N/Y; Package: NEW PW-MOLD2; Number Of Pins: 3; R DS On (&#206;&#169;): (max 4.6); P D (W): (max 1) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs - Nch 500V<VDSS=700V; Surface Mount Type: N; Package: PW-MOLD; R DS On (&#206;&#169;): (max 9); P D (W): (max 1) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
C-Band Power GaAs IMFETs; Frequency Band (GHz): 7.7-8.5; P1dB (dBm): 41.5; G1dB (dB): 8.5; Ids (A) Typ.: 3.2; IM3 (dBc) Typ.: -47; Rth (&#176;C/W) Typ.: 2; Package Type: 2-16G1B 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
C-Band Power GaAs IMFETs; Frequency Band (GHz): 7.1-7.9; P1dB (dBm): 46.5; G1dB (dB): 6.5; Ids (A) Typ.: 9.6; IM3 (dBc) Typ.: -45; Rth (&#176;C/W) Typ.: 0.8; Package Type: 2-16G1B 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs - Nch 500V<VDSS=700V; ; Package: TO-220SIS; R DS On (&#206;&#169;): (max 1.25); P D (W): (max 6) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs - Nch 250V<VDSS=500V; ; Package: TO-220SIS; R DS On (&#206;&#169;): (max 0.97); P D (W): (max 8) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs - Nch 700V<VDSS; Surface Mount Type: N; Package: TO-220SIS; Number Of Pins: 3; R DS On (&#206;&#169;): (max 2.0); P D (W): (max 6) 3-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6
Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (&#206;&#169;): (max 0.2) (max 0.095) (max 0.059); I_S (A): (max -3) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
Pch Power MOSFET; Surface Mount Type: N/Y; Package: NEW PW-MOLD2; Number Of Pins: 3; R DS On (&#206;&#169;): (max 2.0); I_S (A): (max -2.5) 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6
FETs Nch 30V<VDSS=60V; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
RF Switch Diodes; Surface Mount Type: Y; Package: USM; Number of Pins: 3; Application Scope: TV Band Switch 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.9-6.4; P1dB (dBm): 48; G1dB (dB): 8.5; Ids (A) Typ.: 13.2; IM3 (dBc) Typ.: -45; Rth (&#176;C/W) Typ.: 0.6; Package Type: 2-16G1B 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs Nch 30V<VDSS=60V; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
RF Switch Diodes; Surface Mount Type: Y; Package: S-MINI; Number of Pins: 3; Application Scope: TV Band Switch 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
RF Switch Diodes; Surface Mount Type: Y; Package: USC; Number of Pins: 2; Application Scope: TV Band Switch 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
RF Switch Diodes; Surface Mount Type: Y; Package: sESC; Number of Pins: 2; Application Scope: Switch 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
Pch Power MOSFET; Surface Mount Type: N/Y; Package: NEW PW-MOLD2; Number Of Pins: 3; R DS On (&#206;&#169;): (max 0.25) (max 0.17); I_S (A): (max -5) 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
RF Switch Diodes; Surface Mount Type: Y; Package: ESC; Number of Pins: 2; Application Scope: Switch 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
Switching Diodes; Surface Mount Type: N; Package: MINI; Number of Pins: 3; Features: high-speed switching; Internal connection: 2 in 1; Reverse Voltage, max (V): (max 80) 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: VESM; Number of Pins: 3; Features: low VF; Internal connection: 2 in 1; V R (V): (max 10) 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
Switching Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: low leakage; Internal connection: 2 in 1; Reverse Voltage, max (V): (max 80) 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
C-Band Power GaAs IMFETs; Frequency Band (GHz): 3.7-4.2; P1dB (dBm): 41.5; G1dB (dB): 11.5; Ids (A) Typ.: 3.2; IM3 (dBc) Typ.: -47; Rth (&#176;C/W) Typ.: 2; Package Type: 2-16G1B 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs - Nch 250V<VDSS=500V; Surface Mount Type: N; Package: TO-220NIS; R DS On (&#206;&#169;): (max 0.52); P D (W): (max 12) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: USQ; Number of Pins: 4; Features: low VF; Internal connection: 2 in 1; V R (V): (max 10) 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
FETs - Nch 150V<VDSS=250V; Surface Mount Type: N; Package: TO-220NIS; R DS On (&#206;&#169;): (max 0.25); P D (W): (max 13) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
C-Band Power GaAs IMFETs; Frequency Band (GHz): 3.7-4.2; P1dB (dBm): 45.5; G1dB (dB): 10; Ids (A) Typ.: 8; IM3 (dBc) Typ.: -45; Rth (&#176;C/W) Typ.: 1; Package Type: 2-16G1B 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
Discrete IGBTs; Surface Mount Type: Y; Package: SOP-8; Number Of Pins: 8; No Of Circuits: 5th generation; Comments: 2.3 @V_GE=4V, I_C=150A; V_CES (V): (max 400) 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
FETs - Nch 60V<VDSS=150V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.13) (max 0.085); P D (W): (max 20) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.016) (max 0.0095); I_S (A): (max 50) 3-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
High-Frequency Schottky Barrier Diodes; Surface Mount Type: Y; Package: fSC; Number Of Pins: 2; Application Scope: VHF, UHF MIX; V F (V): 0.24; C T (pF): 0.3; V R (V): (max 10); Average Forward Current I_F Max (mA): (max 10)
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output
Vcc1: 4.625 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output
MAXIM - Dallas Semiconductor
http://
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
电源管理
Vicor, Corp.
Elpida Memory, Inc.
MAXIM INTEGRATED PRODUCTS INC
S29GL512N10FFI013 S29GL512N10FFI012 S29GL256N11TFI 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 16M X 16 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology
Spansion, Inc.
SPANSION LLC
TOP225Y TOP221Y TOP223Y TOP226Y TOP222Y TOP224Y TO Lowest cost, lowest component count switcher solution
1.1 A SWITCHING REGULATOR, 110 kHz SWITCHING FREQ-MAX, PDIP8
1.65 A SWITCHING REGULATOR, 110 kHz SWITCHING FREQ-MAX, PDIP8
IC SW PWM OFF-LINE 7/12W TO220 0.28 A SWITCHING REGULATOR, 110 kHz SWITCHING FREQ-MAX, PSFM3
CONNECTOR ACCESSORY
Three-terminal Off-line PWM Switch
POWER INTEGRATIONS INC
Power Integrations Inc.
Power Integrations, Inc...
CS42518 CS42518-DQZ 110 dB, 192 kHz 8-Ch Codec with S/PDIF Receiver
110/114 dB, 192 kHz, 8-Channel CODECS with S/PDIF Receiver
Cirrus Logic, Inc.
ZL30105 ZL30105QDG T1/E1/SDH Stratum 3 Redundant System Clock Synchonizer for AdvancedTCA and H.110
Stratum 3 Redundant System Clock Synchronizer for T1/E1/SDH, Advanced TCATM and H.110
Zarlink Semiconductor Inc
PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 110瓦特,1.20 - 1 .40千兆赫,150毫秒脉冲10%的
Vishay Intertechnology, Inc.
MACOM[Tyco Electronics]
 
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